Activation Energy for the Sublimation of Gallium Nitride

Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...

First-principles total-energy calculation of gallium nitride.

Gallium nitride (GaN) is a tetrahedrally coordinated III-V compound semiconductor which has the hexagonal wurtzite structure with a wide band gap of 3.5 eV at 300 K. It is reported that a simple-metal-insulator-n-typeGaN diode produces blue electroluminescence. ' For this reason it has been studied as a material suitable for an effective optoelectronic device such as laser and light emitting di...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Ultralow wear of gallium nitride

Development of Gallium Nitride Substrates

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...